STMicroelectronics: Extends Industry Leadership in Energy-Efficient Power Control

STMicroelectronics has broken the worldwide record for high-voltage power MOSFETs with the introduction of a new member of the MDmesh™ V family, which was already the industry performance leader, boasting the best on-resistance per area for highest efficiency and power density in 650V rating and can now improve a key efficiency metric by more than 23%. This is a giant leap to energy saving typically lost as heat emitted by power-conversion circuitry used in systems such as electronic lighting controls, power supplies for consumer products, and solar-power converters.

The recently introduced STW88N65M5 MDmesh™ V MOSFET features the industry’s lowest on-state resistance for 650V devices in the standard TO-247 package, at 0.029 Ohms. This betters ST’s previous industry benchmark of 0.038 Ohms, also set by an MDmesh™ V device. This empowers end application designers to increase energy efficiency by directly replacing MOSFETs of higher resistance or to use fewer devices in parallel and so reduce assembly sizes and Bill-Of-Materials (BOM) costs. The 650V voltage rating of ST’s STW88N65M5 and other MDmesh™ V devices provides a greater safety margin than that offered by 600V devices from competing manufacturers. This increases the MOSFET’s ability to withstand voltage surges commonly present on AC power lines.

ST’s market-proven MDmesh™ V technology is available in a vast range of packages including Max247, TO-247, D2PAK, TO-220/FP, PowerFLAT 8x8 HV and I2PAK.

Features:

• Worldwide best RDS(on)in TO-247
• Higher VDSS rating
• Higher dv/dt capability
• Excellent switching performance
• Easy to drive
• 100% avalanche tested

Applications:

• High efficiency switching applications: servers,PV inverters, telecom infrastructure, multi kWbattery chargers.

Datasheet: STW88N65M5